Art
J-GLOBAL ID：200902211916164869
Reference number：03A0184035
Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation.
連続波レーザ照射によるガラス上の薄膜トランジスタの予め規定した活性領域での選択的な単結晶性シリコンの成長
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Author (4)：
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Material：
Volume：
42
Issue：
1
Page：
23-27
Publication year：
Jan. 15, 2003
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
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Manufacturing technology of solid-state devices
, Transistors
Reference (28)：
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1) T. Sameshima, S. Usui and M. Sekiya: IEEE Electron Device Lett. 7 (1986) 276.
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2) K. Sera, F. Okumura, H. Uchida, S. Itoh, S. Kaneko and K. Hotta: IEEE Trans. Electron Devices 36 (1989) 2868.
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3) H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, H. Kawata, M. Osumi, S. Tsuda, S. Nakano and Y. Kuwano: Jpn. J. Appl. Phys. 30 (1991) 3700.
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4) N. Ibaraki: Dig. Tech. Pap. 1999 SID (Society for Information Display, San Jose, CA, 1999) p. 172.
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5) A. Hara, F. Takeuchi and N. Sasaki: J. Appl. Phys. 91 (2002) 708.
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