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J-GLOBAL ID:200902215710515296   Reference number:05A0365451

Formation and reactivity of high quality halogen terminated Si(1 1 1) surfaces

高品質ハロゲン終端Si(111)表面の形成と反応性
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Volume: 579  Issue: 2/3  Page: L89-L96  Publication year: Apr. 01, 2005 
JST Material Number: C0129B  ISSN: 0039-6028  Document type: Article
Article type: 短報  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Surface structure of semiconductors  ,  Study of adsorption by physical means 
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