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J-GLOBAL ID:200902217026635676   Reference number:05A0579693

Effects of Effective Mass Anisotropy and Effective Mass Difference in Highly Photoexcited Semiconductors

強く光励起した半導体における有効質量異方性と有効質量差の効果
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Volume: 74  Issue:Page: 1745-1749  Publication year: Jun. 15, 2005 
JST Material Number: G0509A  ISSN: 0031-9015  CODEN: JUPSA  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Reference (32):
  • 1) L. V. Keldysh and Yu. V. Kopaev: Fiz. Tverd. Tela 6 (1964) 2791 [Sov. Phys. Solid State 6 (1965) 2219].
  • 2) L. V. Keldysh and A. N. Kozlov: Zh. Eks. Teor. Fiz. 54 (1968) 978 [Sov. Phys. JETP 27 (1968) 521].
  • 3) R. Shimano, M. Nagai, K. Horiuch and M. Kuwata-Gonokami: Phys. Rev. Lett. 88 (2002) 057404.
  • 4) C. A. Regal, M. Greiner and D. S. Jin: Phys. Rev. Lett. 92 (2004) 040403.
  • 5) M. W. Zwierlein, C. A. Stan, C. H. Schunck, S. M. F. Raupach, A. J. Kerman and W. Ketterle: Phys. Rev. Lett. 92 (2004) 120403.
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