Bi<sub>2</sub>O<sub>3</sub> rods deposited under atmospheric pressure by means of halide CVD on c-sapphire

TAKEYAMA T.; TAKAHASHI N.; NAKAMURA T.; ITOH S.

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J-GLOBAL ID：200902218683607646 Reference number：05A0342749

Bi₂O₃ rods deposited under atmospheric pressure by means of halide CVD on c-sapphire

ハライドCVDによってcサファイヤ上に大気圧で蒸着したBi₂O₃ロッド

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Volume： 133 Issue： 12 Page： 771-774 Publication year： Mar. 16, 2005
JST Material Number： H0499A ISSN： 0038-1098 Document type： Article
Article type：短報 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Crystal growth of oxides

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Bi2O3 rods deposited under atmospheric pressure by means of halide CVD on c-sapphire

Bi₂O₃ rods deposited under atmospheric pressure by means of halide CVD on c-sapphire