Art
J-GLOBAL ID:200902227730913369   Reference number:03A0549966

MOCVD of High-Dielectric-Constant Lanthanum Oxide Thin Films

高誘電率酸化ランタン薄膜のMOCVD
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Material:
Volume: 150  Issue:Page: G429-G435  Publication year: Aug. 2003 
JST Material Number: C0285A  ISSN: 1945-7111  CODEN: JESOAN  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Oxide thin films  ,  Bases,metal oxides  ,  Materials of solid-state devices 
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