MOCVD of High-Dielectric-Constant Lanthanum Oxide Thin Films

YAMADA H; SHIMIZU T; KUROKAWA A; ISHII K; SUZUKI E

Art

J-GLOBAL ID：200902227730913369 Reference number：03A0549966

MOCVD of High-Dielectric-Constant Lanthanum Oxide Thin Films

高誘電率酸化ランタン薄膜のMOCVD

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Author (5)： , , , ,
Material：
Volume： 150 Issue： 8 Page： G429-G435 Publication year： Aug. 2003
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Oxide thin films , Bases,metal oxides , Materials of solid-state devices

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