Rchr
J-GLOBAL ID：200901060006673024
Update date: Jul. 06, 2022
Shimizu Takashi
シミズ タカシ | Shimizu Takashi
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T77360694
MISC (5)：
超臨界流体を用いた微細構造上への酸化物薄膜の堆積. Extended Abstract(52th Spring Meeting, 2005); The Japan Society of Applied Physics. 2005. 2. 727-727
T Shimizu, K Ishii, E Suzuki. Electrical properties of ruthenium/metalorganic chemical vapor deposited La-oxide/Si field effect transistors. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS. 2003. 42. 11A. L1315-L1317
H Yamada, T Shimizu, A Kurokawa, K Ishii, E Suzuki. MOCVD of high-dielectric-constant lanthanum oxide thin films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2003. 150. 8. G429-G435
H Yamada, T Shimizu, E Suzuki. Interface reaction of a silicon substrate and lanthanum oxide films deposited by metalorganic chemical vapor deposition. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS. 2002. 41. 4A. L368-L370
Nonaka H., Shimizu T., Arai K., Kurokawa A., Ichimura S. In-situ Work Function Measurement of Molecular Beam Epitaxy Film Surface Using RHEED-Beam Excited Secondary Electron Peaks. Journal of Surface Analysis. 2002. 9. 3. 344-347
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