Particle Formation and Trapping Behavior in a TEOS/O<sub>2</sub> Plasma and Their Effects on Contamination of a Si Wafer

SETYAWAN H; SHIMADA M; HAYASHI Y; OKUYAMA K; YOKOYAMA S

Art

J-GLOBAL ID：200902227893322147 Reference number：04A0076877

Particle Formation and Trapping Behavior in a TEOS/O₂ Plasma and Their Effects on Contamination of a Si Wafer

TEOS/O₂プラズマ中の粒子生成と捕獲挙動およびSiウェハの汚染に及ぼすそれらの効果

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=04A0076877&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0076877&from=J-GLOBAL&jstjournalNo=H0030B") }}

Author (5)： , , , ,
Material：
Volume： 38 Issue： 2 Page： 120-127 Publication year： Feb. 2004
JST Material Number： H0030B ISSN： 0278-6826 CODEN： ASTYDQ Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0076877&from=J-GLOBAL&jstjournalNo=H0030B") }}

Semiconductor thin films , Plasma in general

, , , , , , , ,

Return to Previous Page

Particle Formation and Trapping Behavior in a TEOS/O2 Plasma and Their Effects on Contamination of a Si Wafer

Particle Formation and Trapping Behavior in a TEOS/O₂ Plasma and Their Effects on Contamination of a Si Wafer