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J-GLOBAL ID:200902227960214435   Reference number:05A0214860

Nonuniformity in Ultrathin SiO2 on Si(111) Characterized by Conductive Atomic Force Microscopy

伝導原子間力顕微鏡法により特性評価したSi(111)上の長薄膜SiO2中の不均一性
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Volume: 43  Issue: 11B  Page: 7861-7865  Publication year: Nov. 30, 2004 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Metal-insulator-semiconductor structures  ,  Electric conduction in semiconductors and insulators in general 
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