Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss

ONOZAWA Y.; NAKANO H.; OTSUKI M.; YOSHIKAWA K.; MIYASAKA T.; SEKI Y.

Art

J-GLOBAL ID：200902228989539577 Reference number：08A0095590

Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss

より低いEMI雑音とより低いスイッチング損失を特徴とする次世代1200VトレンチゲートFS-IGBTの開発

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Author (6)： , , , , ,
Material：
Volume： 19th Page： 13-16 Publication year： 2007
JST Material Number： W1300A ISSN： 1943-653X Document type： Proceedings
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Noise in general

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