Art
J-GLOBAL ID：200902231083519570
Reference number：03A0717282
The Improvement of the Characteristics of Liquid Phase-Deposited Silicon Dioxide/Silicon Interface
液相堆積シリコン酸化膜/シリコン界面特性の改善
Author (3)：
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Material：
Volume：
123
Issue：
10
Page：
1695-1699
Publication year：
Oct. 01, 2003
JST Material Number：
S0810A
ISSN：
0385-4221
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
JAPANESE (JA)
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JST classification (3)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices
, Transistors
, Oxide thin films
Reference (8)：
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(1) H. Nagayama, H. Honda, and H. Kawahara: “A New Process for Silica Coating”, J. Electrochem. Soc., Vol. 135, No. 8, pp. 2013-2016 (1985)
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(2) H. Kawahara: “Liquid Phase Deposition”, NEW GLASS, Vol. 5, No. 1, pp. 101-109 (1990-1) (in Japanese)
河原秀夫:「液相成膜法について」, NEW GLASS, 5, 1, pp. 101-109 (1990-1)
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(3) T. Sakai, T. Goda, A. Hishinuma, and H. Kawahara: “Advanced Process for SiO2 Film Deposited in Aqueous Solution”, Proc. Int. Ceramics Conf., Western Australia, pp. 474-479 (1990)
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(4) S. Yoshitomi, S. Tomioka, and N. Haneji: “The Characteristics of Si MOS Diodes using the SiO2 Films Prepared by the Liauid Phase Deposition”, Proc. Electron Devices and Materials Sympo., Taipei, pp. 22-25 (1992)
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(5) S. Yoshitomi, S. Tomioka, and N. Haneji: “Characteristics of Si MOS Diodes Using Liquid Phase Deposited SiO2 Films as Gate Insulators”, Trans. IEICE, Vol. J76-C-II, No. 4, pp. 110-117 (1993-4) (in Japanese)
吉富貞幸・富岡聡志・羽路伸夫:「ゲート絶縁膜に液相堆積法によるSiO2膜を用いたSi MOSダイオードの諸特性」, 信学論誌, J76-C-II, 4, pp. 110-117 (1993-4)
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