I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering

TOH Eng-Huat; WANG Grace Huiqi; CHAN Lap; LO Guo-Qiang; SAMUDRA Ganesh; YEO Yee-Chia

Art

J-GLOBAL ID：200902231959742638 Reference number：06A1014483

I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering

バンドギャップエンジニアリング用のエレベートシリコン-ゲルマニウムインパクトイオン化領域をもつI-MOSトランジスタ

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Material：
Volume： 27 Issue： 12 Page： 975-977 Publication year： Dec. 2006
JST Material Number： B0344B ISSN： 0741-3106 CODEN： EDLEDZ Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Transistors , Measurement,testing and reliability of solid-state devices

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