Art

J-GLOBAL ID：200902232763160670   Reference number：09A0830441

Anisotropic half-metallic ground state of Mn atomic wire on GaAs(110)

GaAs(110)上のMn原子ワイヤの異方性半金属基底状態

Author (3)： HIRAYAMA Motoi (Dep. of Electronic-Engineering, The Univ. of Electro-Communications (UEC-Tokyo), 1-5-1 Chofugaoka, Chofu, Tokyo ...) ,  NATORI Akiko (Dep. of Electronic-Engineering, The Univ. of Electro-Communications (UEC-Tokyo), 1-5-1 Chofugaoka, Chofu, Tokyo ...) ,  NAKAMURA Jun (Dep. of Electronic-Engineering, The Univ. of Electro-Communications (UEC-Tokyo), 1-5-1 Chofugaoka, Chofu, Tokyo ...)
Material： Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)
Volume： 27  Issue： 4  Page： 2062  Publication year： Jul. 2009 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *manganese ,  *gallium arsenide ,  gallium ,  displacement(replacement) ,  ground state ,  *ferromagnetism ,  magnetic moment ,  *band structure ,  *metalloid ,  configuration mixing ,  density functional method ,  crystal orientation ,  *spin polarization
Semi thesaurus term： spin-density functional method ,  *atomic wire ,  first principles calculation ,  double exchange interaction

JST classification (3)： Metallic thin films  (BK14030T) ,  Magnetic properties of metals  (BM06040T) ,  Electronic structure of crystalline metals  (BM02050C)

Terms in the title (6)： GaAs ,  Mn ,  原子ワイヤ ,  異方性 ,  半金属 ,  基底状態