Art

J-GLOBAL ID：200902232986803580   Reference number：05A0646236

Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

圧力成長GaN基板上のHVPEによる厚いGaN層の堆積

Author (7)： LUCZNIK B. (High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL) ,  PASTUSZKA B. (High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL) ,  GRZEGORY I. (High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL) ,  BOCKOWSKI M. (High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL) ,  KAMLER G. (High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL) ,  LITWIN-STASZEWSKA E. (High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL) ,  POROWSKI S. (High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 281  Issue： 1  Page： 38-46  Publication year： Jul. 15, 2005 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *epitaxy ,...
Semi thesaurus term： HVPE ,...

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JST classification (1)： Crystal growth of semiconductors  (BK13040X)

Terms in the title (4)： 成長 ,  GaN ,  HVPE ,  堆積