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J-GLOBAL ID:200902236355286920   Reference number:06A0015394

An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system

窒化ガリウム成長化学とその反応室設計への影響の概要:プラネタリー半径流CVD装置への応用
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Material:
Volume: 286  Issue:Page: 259-278  Publication year: Jan. 15, 2006 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 文献レビュー  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Manufacturing technology of solid-state devices  ,  Crystal growth of semiconductors 

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