Art

J-GLOBAL ID：200902238446241751   Reference number：04A0189590

Low-Pressure CMP for Reliable Porous Low-k/Cu Integration

高信頼度多孔質low-κ/Cu集積用の低圧CMP

Author (9)： KONDO S (Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN) ,  TOKITOH S (Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN) ,  YOON B U (Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN) ,  NAMIKI A (Novellus Systems Japan, Inc., Kanagawa-ken, JPN) ,  SONE A (Novellus Systems Japan, Inc., Kanagawa-ken, JPN) ,  OHASHI N (Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN) ,  MISAWA K (Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN) ,  SONE S (Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN) ,  KOBAYASHI N (Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
Material： Proceedings of the IEEE 2003 International Interconnect Technology Conference  (Proc IEEE 2003 Int Interconnect Technol Conf)
Page： 86-88  Publication year： 2003 
JST Material Number： K20030147  ISBN： 0-7803-7797-4  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： porous medium ,...
Semi thesaurus term： pressure dependence ,...

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JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (6)： 信頼度 ,  多孔質 ,  Cu ,  集積 ,  低圧 ,  CMP