Art

J-GLOBAL ID：200902239764556849   Reference number：06A0509953

High rate homoepitaxial growth of diamond by microwave plasma CVD with nitrogen addition

窒素を添加したマイクロ波プラズマCVDによるダイヤモンドの高速ホモエピタキシャル成長

Author (6)： MOKUNO Y. (Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-8-31 Midorigaoka, Ikeda ...) ,  CHAYAHARA A. (Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-8-31 Midorigaoka, Ikeda ...) ,  SODA Y. (Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-8-31 Midorigaoka, Ikeda ...) ,  YAMADA H. (Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-8-31 Midorigaoka, Ikeda ...) ,  HORINO Y. (Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-8-31 Midorigaoka, Ikeda ...) ,  FUJIMORI N. (Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-8-31 Midorigaoka, Ikeda ...)
Material： Diamond and Related Materials  (Diam Relat Mater)
Volume： 15  Issue： 4-8  Page： 455-459  Publication year： Apr. 2006 
JST Material Number： W0498A  ISSN： 0925-9635  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： epitaxy ,...
Semi thesaurus term： *epitaxial growth ,...

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JST classification (1)： Crystal growth of other inorganic compounds  (BK13060T)

Terms in the title (5)： 窒素 ,  マイクロ波プラズマCVD ,  ダイヤモンド ,  ホモ ,  エピタキシャル成長