Art

J-GLOBAL ID：200902241511646510   Reference number：05A0677516

Dominant rate process of silicon surface etching by hydrogen chloride gas

塩化水素ガスによるシリコン表面エッチングの支配的速度過程

Author (6)： HABUKA Hitoshi (Dep. of Chemical Engineering Sci., Yokohama National Univ., 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, JPN) ,  SUZUKI Takahiro (Dep. of Chemical Engineering Sci., Yokohama National Univ., 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, JPN) ,  YAMAMOTO Sunao (Dep. of Chemical Engineering Sci., Yokohama National Univ., 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, JPN) ,  NAKAMURA Akio (Dep. of Chemical Engineering Sci., Yokohama National Univ., 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, JPN) ,  TAKEUCHI Takashi (Dep. of Chemical Engineering Sci., Yokohama National Univ., 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, JPN) ,  AIHARA Masahiko (Dep. of Chemical Engineering Sci., Yokohama National Univ., 79-5 Tokiwadai, Hodogaya, Yokohama, Kanagawa 240-8501, JPN)
Material： Thin Solid Films
Volume： 489  Issue： 1-2  Page： 104-110  Publication year： Oct. 01, 2005 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,...

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JST classification (1)： Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (4)： 塩化水素ガス ,  シリコン ,  エッチング ,  支配