Art

J-GLOBAL ID：200902241553670771   Reference number：04A0797821

Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

4H-SiCエピタキシャル層の基底面転位におよぼす成長条件の影響

Author (6)： OHNO T (R&D Assoc. for Future Electron Devices (FED), Ibaraki, JPN) ,  YAMAGUCHI H (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KURODA S (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KOJIMA K (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  SUZUKI T (R&D Assoc. for Future Electron Devices (FED), Ibaraki, JPN) ,  ARAI K (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 271  Issue： 1/2  Page： 1-7  Publication year： Oct. 15, 2004 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,...

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JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (4)： 4H-SiC ,  エピタキシャル層 ,  基底面転位 ,  成長条件