Rchr
J-GLOBAL ID：200901045289112768
Update date: Sep. 29, 2022
Arai Kazuo
アライ カズオ | Arai Kazuo
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K12764357
MISC (50)：
Yasunori Tanaka, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo, Koji Yano, Masanobu Kasuga. 700-V 1.0-m Omega center dot cm(2) buried gate SiC-SIT (SiC-BGSIT). IEEE ELECTRON DEVICE LETTERS. 2006. 27. 11. 908-910
Kazutoshi Kojima, Satoshi Kuroda, Hajime Okumura, Kazuo Arai. Homoepitaxial growth on a 4H-SiC C-face substrate. CHEMICAL VAPOR DEPOSITION. 2006. 12. 8-9. 489-494
T Kato, S Nishizawa, H Yamaguchi, K Arai. In-situ observation of SiC bulk single crystal growth by XRD system. JOURNAL OF RARE EARTHS. 2006. 24. 2. 49-53
Investigation of in-grown dislocations in 4H-SiC epitaxial layer. MATERIALS SCIENCE FORUM. 2006. 527-529. 147-152
KONDOH Junji, YATSUO Tsutomu, ISHII Itaru, ARAI Kazuo. Estimation of Converters with SiC Devices for Distribution Networks. IEEJ Transactions on Sensors and Micromachines. 2006. 126. 4. 480-488
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