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J-GLOBAL ID:200902242966292054   Reference number:04A0858269

Dislocation density analysis of GaAs bulk single crystal during ingot annealing process (comparison among several computational methods)

インゴット焼きなましプロセスの間のGaAsバルク単結晶の転位密度解析 いくつかの計算法の比較
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Volume: 271  Issue: 3/4  Page: 358-367  Publication year: Nov. 15, 2004 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Crystal growth of semiconductors 

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