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J-GLOBAL ID：200902246546168850   Reference number：05A1011859

Fabrication technology of SiGe hetero-structures and their properties

SiGeヘテロ構造の作製技術とその特性
Author (2)：
SHIRAKI Yasuhiro

About SHIRAKI Yasuhiro

(Advanced Res. Laboratories, Musashi Inst. of Technol., 8-15-1 Todoroki Setagaya-ku, Tokyo, JPN)

About Advanced Res. Laboratories, Musashi Inst. of Technol., 8-15-1 Todoroki Setagaya-ku, Tokyo, JPN

, 
SAKAI Akira

About SAKAI Akira

(Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, JPN)

About Dep. of Crystalline Materials Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku, Nagoya, JPN


Material：
Surface Science Reports  (Surf Sci Rep)

About Surface Science Reports


Volume： 59  Issue： 7-8  Page： 153-207  Publication year： Nov. 2005 
JST Material Number： E0422B  ISSN： 0167-5729  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)
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Thesaurus term/Semi thesaurus term
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*silicon base alloy

About silicon base alloy

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
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strain relaxation

About strain relaxation


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JST classification (3)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts without Gr.13-15 element compounds 
(BM03083P)

About Semiconductor-semiconductor contacts without Gr.13-15 element compounds

,  Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

,  Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
SiGe

About SiGe

, 
ヘテロ構造

About ヘテロ構造

, 
作製

About 作製


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