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J-GLOBAL ID：200902247583730378   Reference number：08A0256276

Single-ion irradiation: physics, technology and applications

単一イオン照射:物理学,技術および応用
Author (1)：
OHDOMARI Iwao

About OHDOMARI Iwao

(Waseda Univ., Tokyo, JPN)

About Waseda Univ., Tokyo, JPN


Material：
Journal of Physics. D. Applied Physics  (J Phys D)

About Journal of Physics. D. Applied Physics


Volume： 41  Issue： 4  Page： 043001,1-27  Publication year： Feb. 21, 2008 
JST Material Number： B0092B  ISSN： 0022-3727  CODEN： JPAPBE  Document type： Article
Article type： 文献レビュー  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*silicon

About silicon

, 
*semiconductor device

About semiconductor device

, 
*radiation damage

About radiation damage

, 
*ion irradiation

About ion irradiation

, 
doping

About doping

, 
*fluctuation

About fluctuation


JST classification (1)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
イオン照射

About イオン照射

, 
物理学

About 物理学

, 
応用

About 応用


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