Art
J-GLOBAL ID：200902249645826221
Reference number：06A0740071
Fabrication and Characterization of 3C-SiC-Based MOSFETs
3C-SiCベースMOSFETsの作製と評価
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Author (5)：
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Material：
Volume：
12
Issue：
8/9
Page：
523-530
Publication year：
Aug. 2006
JST Material Number：
W0908A
ISSN：
0948-1907
CODEN：
CVDEFX
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors
Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
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