Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al<sub>2</sub>O<sub>3</sub> dielectric

HASHIZUME T; OOTOMO S; HASEGAWA H

Art

J-GLOBAL ID：200902251347272420 Reference number：03A0724016

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al₂O₃ dielectric

超薄Al₂O₃誘電体を用いた絶縁ゲートAlGaN/GaNヘテロ構造電界効果トランジスタにおける電流急減の抑制

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=03A0724016&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0724016&from=J-GLOBAL&jstjournalNo=H0613A") }}

Author (3)： , ,
Material：
Volume： 83 Issue： 14 Page： 2952-2954 Publication year： Oct. 06, 2003
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0724016&from=J-GLOBAL&jstjournalNo=H0613A") }}

Semiconductor-semiconductor contacts with Gr.13-15 element compounds , Transistors

, , , , , , ,

Return to Previous Page

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al₂O₃ dielectric