Rchr

J-GLOBAL ID：200901056044977480 Update date: Apr. 03, 2024

Hashizume Tamotsu

ハシヅメタモツ | Hashizume Tamotsu

Affiliation and department：

Research field (2)： Thin-film surfaces and interfaces , Electric/electronic material engineering

Research keywords (3)：半導体デバイス , Semiconductor device , Semiconductor nanostructure

Research theme for competitive and other funds (38)：

2020 - 2023 過酷環境エレクトロニクスにむけた窒化物半導体集積回路プロセス技術の開発
2020 - 2023 Development of wet etching technology for nitride semiconductors using strong oxidizing agents and application to transistors
2019 - 2022 窒素極性GaN系MIS-HEMTのパワーデバイス応用に向けた研究
2016 - 2021 Steering Group
2017 - 2020 Low-damage Processing of Nitride Semiconductors Based on Self-stoping Oxdization and Transistor Applications

2016 - 2020 特異構造を含む異種接合の界面制御と電子デバイス展開

2015 - 2019 高い安定性を有するGaN-MOSトランジスタスイッチ

2014 - 2019 GaN縦型パワーデバイスの基盤技術開発

2015 - 2018 Visible light responsive photocatalysts utilizing nitride semiconductor-based nanostructures for artificial photosynthesis

2013 - 2016 Nanoscale control of nitride semiconductor surface using low-damaged process for high-sensitive chemical sensors

2009 - 2015 異種接合GaN横型トランジスタのインバータ展開

2009 - 2013 電子準位制御と新ゲート構造による窒化ガリウム系トランジスタの高信頼化

2009 - 2010 窒化物半導体混晶のバルク準位評価とナノ構造表面制御

2009 - 2010 化合物半導体配列ナノ構造を基盤とする超接合光吸収体の創成と太陽電池応用

2007 - 2009 Development of Quantum Integrated Hardwares based on Semiconductor Nanowires

2007 - 2008 III族窒化物半導体混晶の欠陥準位・表面準位の評価と制御

2005 - 2006 Reliability improvement of GaN-based devices by controlling defects and interfaces

2001 - 2005 有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス

2002 - 2004 Surface/interface control of high-frequency and high-power transistors based on GaN materials

2001 - 2003 Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates

2000 - 2002 Formation of Photonic Crystals by Selective Area Growth and Their Applications

2000 - 2001 Research and development of III-V quantum wire transistor-based logic and memory circuits operating near the quantum limit

1999 - 2001 "Insulated gate structures on GaN and their interface properties"

1999 - 2001 Metal contact formation to GaN based on the interface control technologies

1999 - 2000 Control of Metal-Compound Semiconductor Interfaces by Formation of Nano-Scale Schottky Contacts and Its Application

1999 - 1999 電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構

1998 - 1999 Low Temperature Deposition of TiN Diffusion Barrier Metal for Integrated Circuit by Low Frequency Plasma CVD

1998 - 1999 Novel Insulated Gate Structure having Ultrathin Si Quantum Well for Realization of InP-Based Ultra High-Frequency and High-Power Devices

1996 - 1999 "Development of Novel Technology for Integratio of Single Electron Devices"

1998 - 1998 電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構

1997 - 1998 "Fabrication of high-speed and low-power-consumption InP-based HEMT by novel interface control techniques"

1997 - 1998 "Realization of Schottky-limit at metal-semiconductor interfaces and its application to electron devices"

1997 - 1997 電気化学プロセスを利用したショットキー接合形成における溶液/半導体界面の反応機構

1996 - 1997 Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum

1995 - 1996 "A study on novel quantum structures utilizing direct Schottky contacts to the two dimensional electon gas"

1995 - 1996 Fabrication of InP-based high-speed integrated circuits using MESFETs with high Schottky barrier height

1995 - 1996 Control of surface states for III-V semiconductor quantum structures and its application to novel optical devices

1994 - Nano-scale surface control of semiconductors for device applications

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Papers (204)：

Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, et al. Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2021. 39. 6
Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Takashi Onaya, Koji Shiozaki, Ryota Ochi, et al. Influence of HfO2 and SiO2 interfacial layers on the characteristics of n-GaN/HfSiOx capacitors using plasma-enhanced atomic layer deposition. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. 2021. 39. 6
Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, et al. (Invited) Study of HfO2-Based High-k Gate Insulators for GaN Power Device. ECS Transactions. 2021. 104. 4. 113-120
Joel T. Asubar, Zenji Yatabe, Dagmar Gregusova, Tamotsu Hashizume. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation. Journal of Applied Physics. 2021. 129. 12. 121102-121102
Tamotsu Hashizume, Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato. HfSiOx-gate GaN MOS-HEMTs for RF power transistor. Proceedings of SPIE - The International Society for Optical Engineering. 2021. 11686

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MISC (267)：

Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara, Zenji Yatabe, Kenya Nishiguchi, Tamotsu Hashizume. Improved linearity, stability, and thermal performance of multi-mesa-channel AlGaN/GaN HEMTs. Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Congress. 2016. 34. INV-1B-01-1-4
谷田部然治, 橋詰保. 依頼講演 Al2O3/AlGaN/GaN構造の界面電子準位評価 (シリコン材料・デバイス). 電子情報通信学会技術研究報告 = IEICE technical report : 信学技報. 2015. 115. 108. 1-4
NISHIGUCHI Kenya, HASHIZUME Tamotsu. Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias. Technical report of IEICE. LQE. 2014. 114. 338. 91-95
橋詰保, 谷田部然治, 佐藤威友. GaNパワー素子のための絶縁膜界面制御. 電気学会研究会資料. EDD, 電子デバイス研究会. 2014. EDD-14. 39-49. 13-16
Hashizume Tamotsu. F161003 Process technologies based on the control of GaN-related heterointerfaces for power transistor application. Mechanical Engineering Congress, Japan. 2013. 2013. "F161003-1"-"F161003-4"

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Books (1)：

高周波半導体材料・デバイスの新展開
シーエムシー出版 2006

Professional career (1)：

工学博士 (北海道大学)

Work history (14)：

2022/08 - 現在 Nagoya University Institute of Materials and Systems for Sustainability
2016/04 - 2022/03 Nagoya University Institute of Materials and Systems for Sustainability
2004/04 - 2022/03 Hokkaido University Research Center for Integrated Quantum Electronics
2014/04 - 2020/03 Hokkaido University Research Center for Integrated Quantum Electronics
2014 - 2020 Director, RCIQE, Hokkaido Univ.

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Committee career (4)：

2012/04 - 2014/03 応用物理学会北海道支部長
2012/04 - 2014/03 応用物理学会理事
2009/04 - 2011/03 電子情報通信学会電子デバイス専門委員会委員長
2007 - 電子情報通信学会電子デバイス研究会副委員長

Awards (6)：

2018/09 - The Japan Society of Applied Physics Fellow
2016/09 - 2016 Paper Award, The Japan Society of Applied Physics
2016/09 - 応用物理学会優秀論文賞
2014/05 - CS-MANTECH 2013 Paper Awards (He Bong Kim Award)
2014/04 - 応用物理学会 APEX/JJAP編集貢献賞

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Association Membership(s) (2)：

電子情報通信学会 , 応用物理学会

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