Characterization of the InGaAs/InAlAs HEMT Transit Output Response by Using an Electro-Optical Sampling Technique

KIM Seong-Jin; ITATANI T.; SUGAYA T.; OGURA M.; SUGIYAMA Y.

Art

J-GLOBAL ID：200902252207962288 Reference number：05A0824954

Characterization of the InGaAs/InAlAs HEMT Transit Output Response by Using an Electro-Optical Sampling Technique

電子-光サンプリング技術を用いたInGaAs/InAlAs HEMT過渡応答のキャラクタリゼーション

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=05A0824954&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=05A0824954&from=J-GLOBAL&jstjournalNo=T0357A") }}

Author (5)： , , , ,
Material：
Volume： 47 Issue： 3 Page： 520-524 Publication year： Sep. 15, 2005
JST Material Number： T0357A ISSN： 0374-4884 Document type： Article
Article type：原著論文 Country of issue： Korea, Republic of (KOR) Language： ENGLISH (EN)

,...
,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=05A0824954&from=J-GLOBAL&jstjournalNo=T0357A") }}

Measuring methods and instruments of waveform,frequency,wavelength,phase , Transistors , Semiconductor-semiconductor contacts with Gr.13-15 element compounds

, , , , , ,

Return to Previous Page