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J-GLOBAL ID：200902257639760572   Reference number：06A0951253

The electronic properties of amorphous and crystallized In2O3 films

非晶質および結晶化In₂O₃膜の電子的性質

Author (6)： NAKAZAWA Hiromi (Res. and Dev. Center, Geomatec Co. Ltd., Ohtaku, Tokyo 146-0093, JPN) ,  ITO Yuko (Res. and Dev. Center, Geomatec Co. Ltd., Ohtaku, Tokyo 146-0093, JPN) ,  MATSUMOTO Eiji (Res. and Dev. Center, Geomatec Co. Ltd., Ohtaku, Tokyo 146-0093, JPN) ,  ADACHI Kenji (Ichikawa Res. Laboratories, Sumitomo Metal Mining Co. Ltd., Ichikawa, Chiba 272-8588, JPN) ,  AOKI Nobuyuki (Dep. of Electronics and Mechanical Engineering, Chiba Univ., Chiba 263-8522, JPN) ,  OCHIAI Yuichi (Dep. of Electronics and Mechanical Engineering, Chiba Univ., Chiba 263-8522, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 100  Issue： 9  Page： 093706-093706-8  Publication year： Nov. 01, 2006 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： amorphous state ,...

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JST classification (2)： Electric conduction in semiconductors and insulators in general  (BM03041P) ,  Oxide thin films  (BK14050P)

Terms in the title (4)： 非晶質 ,  結晶化 ,  電子 ,  性質