Solid-phase crystallization behaviors of in situ phosphorous-doped amorphous silicon films deposited using Si2H6 and PH3

YOKOYAMA S; ONIZUKA H; YOSHIZAWA Y; KUWANO H

Art

J-GLOBAL ID：200902261114389684 Reference number：03A0509493

Solid-phase crystallization behaviors of in situ phosphorous-doped amorphous silicon films deposited using Si₂H₆ and PH₃

Si₂H₆とPH₃を用いて堆積した,その場りんドープ非晶質シリコン膜の固相結晶化挙動

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Author (4)： , , ,
Material：
Volume： 94 Issue： 1 Page： 770-773 Publication year： Jul. 01, 2003
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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