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J-GLOBAL ID:200902261905946307   Reference number:06A0739160

Properties of Ga-Doped ZnO Deposited by a Dc-Arc Ion Plating Method

アーク放電蒸着イオンプレーテイング法によるGaドープ酸化亜鉛薄膜
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Volume: 2004/21st  Page: 174-175  Publication year: Jan. 28, 2004 
JST Material Number: L4449A  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Oxide thin films 
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