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J-GLOBAL ID:200902262847627650   Reference number:03A0563693

First-Principles Calculation of the Dyanamics of Nitrogen on the SiC(0001) Surface during the Epitaxial Growth of GaN(0001)

GaN(0001)のエピタキシャル成長中のSiC(0001)上の窒素の動力学の第一原理計算
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Volume: 42  Issue: 7B  Page: 4636-4638  Publication year: Jul. 30, 2003 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Electron theory of adsorption  ,  Semiconductor thin films 
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