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J-GLOBAL ID:200902263325541795   Reference number:04A0698299

InGaN,InAlN多接合タンデム太陽電池の理論変換効率と格子不整合率

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Material:
Volume: 65th  Issue:Page: 312  Publication year: Sep. 01, 2004 
JST Material Number: Y0055A  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Solar cell  ,  Semiconductor thin films 

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