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J-GLOBAL ID：200902264405270470   Reference number：07A1015340

GaN中に拡散した炭素が形成するエネルギー準位

Author (2)：
KIMURA TAKESHI

About KIMURA TAKESHI

(北大 量子集積エレクトロニクス研セ)

About 北大 量子集積エレクトロニクス研セ

, 
HASHIZUME TAMOTSU

About HASHIZUME TAMOTSU

(北大 量子集積エレクトロニクス研セ)

About 北大 量子集積エレクトロニクス研セ


Material：
応用物理学会学術講演会講演予稿集  (Extended Abstracts. Annual Meeting. Japan Society of Applied Physics)

About 応用物理学会学術講演会講演予稿集


Volume： 68th  Issue： 3  Page： 1429  Publication year： Sep. 04, 2007 
JST Material Number： Y0055A  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
Thesaurus term：
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*gallium nitride

About gallium nitride

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
OMVPE

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Electronic structure of impurites and defects 
(BM02100I)

About Electronic structure of impurites and defects

Terms in the title (4)：
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GaN

About GaN

, 
拡散

About 拡散

, 
炭素

About 炭素

, 
エネルギー準位

About エネルギー準位


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