Art

J-GLOBAL ID：200902266095163817   Reference number：06A0555163

Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures

原子窒素ラジカルによるGe金属-絶縁体-半導体構造用の純粋な窒化ゲルマニウムの形成

Author (6)： MAEDA Tatsuro (MIRAI Project, Advanced Semiconductor Res. Center-National Inst. of Advanced Industrial Sci. and Technol. ...) ,  YASUDA Tetsuji (MIRAI Project, Advanced Semiconductor Res. Center-National Inst. of Advanced Industrial Sci. and Technol. ...) ,  NISHIZAWA Masayasu (MIRAI Project, Advanced Semiconductor Res. Center-National Inst. of Advanced Industrial Sci. and Technol. ...) ,  MIYATA Noriyuki (MIRAI Project, Advanced Semiconductor Res. Center-National Inst. of Advanced Industrial Sci. and Technol. ...) ,  MORITA Yukinori (MIRAI Project, Advanced Semiconductor Res. Center-National Inst. of Advanced Industrial Sci. and Technol. ...) ,  TAKAGI Shinichi (MIRAI Project, ASRC-AIST, AIST Tsukuba West 7, Tsukuba, Ibaraki 305-8569, Japan, and The Univ. of Tokyo, 7-3-1 Hongo ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 100  Issue： 1  Page： 014101-014101-7  Publication year： Jul. 01, 2006 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： MOSFET ,...
Semi thesaurus term： plasma treatment ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=06A0555163&from=J-GLOBAL&jstjournalNo=C0266A") }}

JST classification (1)： Thin films of other inorganic compounds  (BK14060A)

Terms in the title (6)： 原子 ,  窒素 ,  ラジカル ,  Ge ,  金属-絶縁体-半導体構造 ,  窒化ゲルマニウム