Rchr
J-GLOBAL ID：200901086828190784
Update date: Jul. 05, 2022
Miyata Noriyuki
ミヤタ ノリユキ | Miyata Noriyuki
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=N57906549
MISC (16)：
Tatsuro Maeda, Tetsuji Yasuda, Masayasu Nishizawa, Noriyuki Miyata, Yukinori Morita, Shinichi Takagi. Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures. JOURNAL OF APPLIED PHYSICS. 2006. 100. 1. 014101-
N Miyata, Y Morita, T Horikawa, T Nabatame, M Ichikawa, A Toriumi. Two-dimensional void growth during thermal decomposition of thin HfO2 films on Si. PHYSICAL REVIEW B. 2005. 71. 23. 233302-1-233302-4
H Ota, N Yasuda, T Yasuda, Y Morita, N Miyata, K Tominaga, M Kadoshima, S Migita, T Nabatame, A Toriumi. Study on oxynitride buffer layers in HfO2 metal-insulator-semiconductor structures for improving metal-insulator-semiconductor field-effect transistor performance. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 4A. 1698-1703
N Miyata, H Ota, M Ichikawa. Correlation between scanning-probe-induced spots and fixed positive charges in thin HfO2 films. APPLIED PHYSICS LETTERS. 2005. 86. 11. 112906-1-112906-3
Nanometer scale crystallization of thin HfO2 films observed by HF-chemcail etching process. APPLIED PHYSICS LETTERS. 2005. 86. 212907-1-212907-3
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