Growth of GaN on Porous SiC and GaN Substrates

INOKI C K; KUAN T S; LEE C D; SAGAR A; FEENSTRA R M; KOLESKE D D; DIAZ D J; BOHN P W; ADESIDA I

Art

J-GLOBAL ID：200902269642516591 Reference number：03A0564061

Growth of GaN on Porous SiC and GaN Substrates

多孔質のSiCとGaNの基板の上のGaNの成長

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Material：
Volume： 32 Issue： 8 Page： 855-860 Publication year： Aug. 2003
JST Material Number： D0277B ISSN： 0361-5235 Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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