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J-GLOBAL ID:200902272511413607   Reference number:08A0887639

Deep-Trap Stress Induced Leakage Current Model for Nominal and Weak Oxides

薄くて弱い酸化膜の関係する深いトラップに関するストレス誘起の漏れ電流モデル
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Volume: 47  Issue: 8 Issue 1  Page: 6208-6213  Publication year: Aug. 25, 2008 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Metal-insulator-semiconductor structures 
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