Determination of thickness and lattice distortion for the individual layer of strained Al<sub>0.14</sub>Ga<sub>0.86</sub>N/GaN superlattice by high-angle annular dark-field scanning transmission electron microscopy

SHIOJIRI M.; CEH M.; STURM S.; CHUO C. C.; HSU J. T.; YANG J. R.; SAIJO H.

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J-GLOBAL ID：200902273986455513 Reference number：05A0734666

Determination of thickness and lattice distortion for the individual layer of strained Al_0.14Ga_0.86N/GaN superlattice by high-angle annular dark-field scanning transmission electron microscopy

高角環状暗視野走査型透過型電子顕微鏡による歪んだAl_0.14Ga_0.86N/GaN超格子の各層に対する厚みと格子変形の決定

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Author (7)： , , , , , ,
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Volume： 87 Issue： 3 Page： 031914.1-031914.3 Publication year： Jul. 18, 2005
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films , Lattice defects in semiconductors

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Determination of thickness and lattice distortion for the individual layer of strained Al0.14Ga0.86N/GaN superlattice by high-angle annular dark-field scanning transmission electron microscopy

Determination of thickness and lattice distortion for the individual layer of strained Al_0.14Ga_0.86N/GaN superlattice by high-angle annular dark-field scanning transmission electron microscopy