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J-GLOBAL ID：200902275086074606   Reference number：06A0574110

Dependence of spin-transfer switching current on free layer thickness in Co-Fe-B/MgO/Co-Fe-B magnetic tunnel junctions

Co-Fe-B/MgO/Co-Fe-B磁気トンネル接合における自由層厚に対するスピン移動スイッチング電流の依存性

Author (10)： KUBOTA Hitoshi (Nanoelectronics Res. Inst. (NeRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1, Umezono ...) ,  FUKUSHIMA Akio (Nanoelectronics Res. Inst. (NeRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1, Umezono ...) ,  OOTANI Yuichi (Nanoelectronics Res. Inst. (NeRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1, Umezono ...) ,  YUASA Shinji (Nanoelectronics Res. Inst. (NeRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1, Umezono ...) ,  ANDO Koji (Nanoelectronics Res. Inst. (NeRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1, Umezono ...) ,  MAEHARA Hiroki (Electron Device Div., Canon ANELVA Corp., 5-8-1, Yotsuya, Fuchu 183-8508, JPN) ,  TSUNEKAWA Koji (Electron Device Div., Canon ANELVA Corp., 5-8-1, Yotsuya, Fuchu 183-8508, JPN) ,  DJAYAPRAWIRA David D. (Electron Device Div., Canon ANELVA Corp., 5-8-1, Yotsuya, Fuchu 183-8508, JPN) ,  WATANABE Naoki (Electron Device Div., Canon ANELVA Corp., 5-8-1, Yotsuya, Fuchu 183-8508, JPN) ,  SUZUKI Yoshishige (Graduate School of Engineering Sci., Osaka Univ., 1-3, Machikaneyama, Toyonaka 560-8531, JPN)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 89  Issue： 3  Page： 032505-032505-3  Publication year： Jul. 17, 2006 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *tunnel junction ,...
Semi thesaurus term： random access memory ,...

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JST classification (1)： Other contacts  (BM03088W)

Terms in the title (8)： CO ,  Fe ,  MgO ,  磁気トンネル接合 ,  層厚 ,  スピン移動 ,  スイッチング電流 ,  依存性