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J-GLOBAL ID：200902276244934835   Reference number：04A0494252

Optical properties of ZnGeN2 epitaxial layer

ZnGeN2エピタキシャル薄膜の光学的特性
Author (5)：
SHIGEHISA KEI

About SHIGEHISA KEI

(豊橋技科大)

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, 
MISAKI TAKAO

About MISAKI TAKAO

(豊橋技科大)

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, 
WAKAHARA AKIHIRO

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(豊橋技科大)

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, 
OKADA HIROSHI

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(豊橋技科大)

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, 
YOSHIDA AKIRA

About YOSHIDA AKIRA

(豊橋技科大)

About 豊橋技科大


Material：
電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))

About 電子情報通信学会技術研究報告


Volume： 104  Issue： 39(ED2004 15-22)  Page： 39-44  Publication year： May. 13, 2004 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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*epitaxy

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,...
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forbidden band

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JST classification (3)：
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors 
(BK13040X)

About Crystal growth of semiconductors

,  Light emitting devices 
(NC03082G)

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,  Manufacturing technology of solid-state devices 
(NC03030V)

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Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
エピタキシャル

About エピタキシャル

, 
薄膜

About 薄膜

, 
光学的特性

About 光学的特性


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