Rchr
J-GLOBAL ID:200901069582833077
Update date: Sep. 13, 2024
Wakahara Akihiro
ワカハラ アキヒロ | Wakahara Akihiro
Affiliation and department:
Job title:
Professor
Homepage URL (1):
http://www.int.ee.tut.ac.jp/
Research field (4):
Electronic devices and equipment
, Electric/electronic material engineering
, Crystal engineering
, Thin-film surfaces and interfaces
Research keywords (3):
Semiconductor Physics
, Crystal Growth
, Optoelectronics
Research theme for competitive and other funds (32):
- 2016 - 2018 Single Photon Source and Qubits Based on Lanthanide Doped GaN
- 2015 - 2018 Introduction of experiments using blue LED fabrication to the education of National institution of technology
- 2018 - 集積化マイクロLEDアレイ技術の高解像度プロジェクタへの展開
- 2014 - 2017 The construction of an education skill archive enabling practical education and joint ownership by the ICT
- 2013 - 2016 Development of defect reduction method for a lattice-matched III-V-N / Si laser monolithically integrated on Si-chip
- 2010 - 2012 Rare-earth doped gallium nitride semiconductor light emitting device and their application
- 2008 - 2012 Study on atomic relaxation of III-N-V semiconductor
- 2008 - 2009 窒素クラスタ位置制御によるSiと格子整合する直接遷移III-V-N規則混晶の創成
- 2005 - 2007 Development of Optoelectronic Integrated Devices based on BIN-RE alloy semiconductor and Si
- 2003 - 2005 Device Process for Integrated Systems Composed of Dislocation-Free III-V-N Alloys and Silicon
- 2003 - 2004 ナノカーボンの表面ナノコーティングと太陽電池への適用に対する基礎検討
- 2002 - 2004 化合物半導体-シリコン無転位一体化層の高品質化と光デバイスへの応用
- 2002 - 2003 II-VI-N_2多元窒化物単結晶の成長と基礎物性解明
- 2001 - 2003 Substrate using epitaxial Al_2O_3 film for hetero-epitaxial growth and device applications
- 2000 - 2001 カーボンナノチューブの電界効果およびトランジスタへの応用
- 1999 - 2001 Investigation of Compositional Inhomogeneity in InAlGaN and Realization of Lattice-Matched Quantum Structure by Group-III Nitrides
- 1998 - 2000 Researching for New Quantum Optoelectronic Properties by Disorderly Stacked-Layer of Disordered Quantum Dots
- 1999 - 希土類添加III-V族窒化物半導体の光電物性評価と光デバイス応用に関する研究
- 1999 - Investigation of Rare-Earth doped III-Nitride Alloy and its Application for Optoelectronic devices
- 1996 - 1997 New Quantum Optoelectronic Properties of Semiconductors with Disordered Structures
- 1995 - 1997 Light-Emitting Devices with Self-Formation Disordered Quantum Dots
- 1995 - 1997 High Performance Optoelectronic Integrated Devices by Micromachining Technique
- 1996 - 1996 自己形成量子ドット構造の形成機構の解明と制御
- 1995 - 1995 AlGaP系短周期超格子の発光機構解明と発光効率向上に関する研究
- 1995 - 1995 Heteroepitaxial Mechanism of Ouantum-Effect Semiconductors
- 1994 - 1995 Realization of disordered quantum wire semicondctors
- 1994 - 1994 AlP/GaP超格子中に導入した窒素等電子準位の解明と発光効率向上に関する研究
- 1993 - 1993 アルキルV族原料を用いた有機金属気相成長の表面反応過程
- 1992 - 1993 DISORDERED SUPERLATTICES
- 1992 - 1992 結晶成長の原子レベル制御
- 1991 - 1991 結晶成長の原子レベル制御
- 1989 - 1991 MATERIALIZATION OF ANISOTROPIC CRYSTALLINE SEMICONDUCTORS
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Papers (228):
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E. M. Pavelescu, D. Ticoş, O. Ligor, C. Romaniţan, A. Matei, F. Comănescu, V. Ţucureanu, S. I. Spânulescu, C. Ticoş, T. Ohshima, et al. Enhancement in photoluminescence from GaPAsN/GaP alloys by 6-MeV electrons irradiation and rapid thermal annealing. Optical Materials. 2024. 149. 115075
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Mitsuo Yamaga, Kevin P. O'Donnell, Hiroto Sekiguchi, Akihiro Wakahara. Crystal-field analysis and models of Eu-emission centers with C3 symmetry in situ Eu- and Mg-codoping GaN layers. Journal of Luminescence. 2023. 262. 119953-119953
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Keisuke Yamane, Yuito Maki, Shun One, Akihiro Wakahara, Emil Mihai Pavelescu, Takeshi Ohshima, Tetsuya Nakamura, Mitsuru Imaizumi. Mechanism of improved crystallinity by defect-modification in proton-irradiated GaAsPN photovoltaics: Experimental and first-principle calculations approach. Journal of Applied Physics. 2022. 132. 6
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Tomohiro Okuno, Ryota Onoda, Lisa Toyoshima, Kasumi Miyata, Hiroto Sekiguchi, Akihiro Wakahara, Toshihiro Nakaoka. Local strain-dependent Zeeman splitting in GaN:Eu. AIP Advances. 2022. 12. 7. 075315-075315
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Keisuke Yamane, Ryo Futamura, Shigeto Genjo, Daiki Hamamoto, Yuito Maki, Emil Mihai Pavelescu, Takeshi Ohshima, Taishi Sumita, Mitsuru Imaizumi, Akihiro Wakahara. Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing. JAPANESE JOURNAL OF APPLIED PHYSICS. 2022. 61. 2
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MISC (12):
Patents (20):
Books (4):
-
Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications (Topics in Applied Physics)
Springer 2014 ISBN:9401784728
-
固体電子物性 (新インターユニバーシティ)
オーム社 2009 ISBN:4274207811
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プロフェッショナル英和辞書 スペッドテラ
小学館 2004 ISBN:9784095067117
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結晶成長の基礎(共著)
培風館 1997 ISBN:4563036188
Lectures and oral presentations (852):
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Antimony Surfactant Effects on Growth of Diluted III-V Nitride Alloys
(The 71st JSAP Spring Meeting 2024)
-
X-ray Photoelectron Spectroscopy Study of SiO2/GaN Formed by Atomic-Species-Enhanced Chemical Vapor Deposition
(The 84th JSAP Autum Meeting 2023)
-
Electron Irradiation Examination on GaPN alloys for controlling bonding states in dilute nitride alloys
(Thr 84th JSAP Autum Meeting 2023)
-
InP/GaPN系 Type-II 量子ドット太陽電池構造の作製
(第70回応用物理学会春季学術講演会 2023)
-
基底状態原子支援化学気相堆積法によるシリコン酸化膜の形成及び評価(2)
(2023年第70回応用物理学会春季学術講演会 2023)
more...
Education (4):
- 1987 - 1990 Toyohashi University of Technology
- 1985 - 1987 Toyohashi University of Technology
- 1983 - 1985 Toyohashi University of Technology Faculty of Engineering
- - 1983 Ntional Institute of Technology, Kushiro College Department of Electronics
Professional career (1):
- Dr of Engineering (Toyohashi University of Technology)
Work history (6):
Committee career (5):
- 2021/10 - 現在 Electronic Materials Symposium Chair, Steering Committee
- 2020/12 - 現在 日本学術振興会 産学協力委員会 R025 先進薄膜界面機能創成委員会 委員
- 2005 - 現在 応用物理学会 東海支部 幹事
- 2021/04 - 2023/03 応用物理学会 理事(支部長)
- 2002 - 2005 応用物理学会 学会誌 編集委員
Awards (2):
- 2016/04 - The Japan Society of Applied Physics Poster Award イオン注入技術を用いたプレーナ型GaN-LEDの作製
- 2007/09 - The Japan Society of Applied Physics JSAP Outstanding Paper Award Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/Alloy Layers
Association Membership(s) (4):
Materials Society of Japan
, Japanese Association for Crystal Growth Cooperation
, Japan Society of Applied Physics
, The Institute of Electronics, Information and Communication Engineers
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