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J-GLOBAL ID:200902278343991568   Reference number:03A0868958

Room-temperature electroluminescence properties of Er,O-codoped GaAs injection-type light-emitting diodes grown by organometallic vapor phase epitaxy

有機金属気相エピタクシーで成長したEr,OコドープGaAs注入型発光ダイオードに関する室温エレクトロルミネセンス特性
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Material:
Volume: 83  Issue: 22  Page: 4521-4523  Publication year: Dec. 01, 2003 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
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Light emitting devices  ,  Semiconductor thin films  ,  Luminescence of semiconductors 

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