Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

WATAKABE H; SAMESHIMA T; KANNO H; SADOH T; MIYAO M

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J-GLOBAL ID：200902278477501915 Reference number：04A0460508

Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing

パルスレーザ・アニーリングで作製したポリSiGe薄膜の電気的性質と構造

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Author (5)： , , , ,
Material：
Volume： 95 Issue： 11,Pt.1 Page： 6457-6461 Publication year： Jun. 01, 2004
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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