Art

J-GLOBAL ID：200902280470390993   Reference number：09A0356846

Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy

分子線エピタクシーによって成長させたAlN薄膜の作製と急速熱アニーリング

Author (8)： LIU B. (Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN) ,  LIU B. (School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN) ,  GAO J. (Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN) ,  GAO J. (School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN) ,  WU K.m. (Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN) ,  WU K.m. (School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN) ,  LIU C. (Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN) ,  LIU C. (School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN)
Material： Solid State Communications  (Solid State Commun)
Volume： 149  Issue： 17-18  Page： 715-717  Publication year： May. 2009 
JST Material Number： H0499A  ISSN： 0038-1098  Document type： Article
Article type： 短報  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *aluminum nitride ,  compound semiconductor ,  semiconductor thin film ,  *MBE growth ,  temperature dependence ,  dislocation(crystal) ,  surface roughness ,  X-Ray Diffraction ,  electron microscopy ,  transmission electron microscope ,  high resolution electron microscope ,  atomic force microscope ,  RHEED ,  RTA ,  lattice defect

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (6)： 分子線エピタクシー ,  成長 ,  AlN ,  薄膜 ,  作製 ,  急速熱アニーリング