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J-GLOBAL ID：200902282174696958
Reference number：06A0594129
Ultra-Shallow Junction Formation by Non-Melt Laser Spike Annealing and its Application to Complementary Metal Oxide Semiconductor Devices in 65-nm Node
非溶融レーザースパイクアニーリングによるきわめて浅い接合の形成と65-nmノードの相補的金属酸化物半導体デバイスへの応用
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Author (2)：
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Material：
Volume：
45
Issue：
7
Page：
5708-5715
Publication year：
Jul. 15, 2006
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices
Reference (17)：
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S. Talwar, G. Verma and K. H. Weiner: Proc. Ion Implantation Technology 98, 1998, p. 1171.
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B. Yu, Y. Wang, H. Wang, Q. Xiang, C. Riccobene, S. Talwar and M. Lin: IEDM Tech. Dig., 1999, P. 509.
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R. Murto, K. Jones, M. Rendon and S. Talwar: Proc. Ion Implantation Technology 2000, 2000, p. 182.
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K. Tsuji, K. Takeuchi and T. Mogami: Dig. Tech. Pap. Symp. VLSI Technology, 1999, p. 9.
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J. Borland and C. Galewski: Proc. Ion Implantation Technology 98, 1998, p. 1211.
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