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J-GLOBAL ID:200902284427395880   Reference number:06A0266716

ダイヤモンドへのイオン照射による局所低抵抗層の形成とその応用

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Volume: 53rd  Issue:Page: 623  Publication year: Mar. 22, 2006 
JST Material Number: Y0054A  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Manufacturing technology of solid-state devices  ,  Transistors 
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