Effects of Ge Doping on Micromorphology of MnSi in MnSi<sub>~1.7</sub> and on Their Thermoelectric Transport Properties

AOYAMA Ikuto; FEDOROV Mikhail I.; ZAITSEV Vladimir K.; SOLOMKIN Fedor Yu.; EREMIN Ivan S.; SAMUNIN Aleksandr Yu.; MUKOUJIMA Mika; SANO Seijiro; TSUJI Toshihide

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Effects of Ge Doping on Micromorphology of MnSi in MnSi_~1.7 and on Their Thermoelectric Transport Properties

MnSi_~1.7におけるMnSiの微細形態および熱電子トランスポート特性におよぼすGeドーピングの効果

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Volume： 44 Issue： 12 Page： 8562-8570 Publication year： Dec. 15, 2005
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Electric conduction in crystalline semiconductors

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2) V. K. Zaitsev: in CRC Handbook of Thermoelectrics, ed. D. M. Rowe (CRC Press, Boca Rayton, FL, 1995) Chap. 25, p. 304.
3) O. Schwomma, A. Preisinger, H. Nowotny and A. Wittman: Monatshefte. Chem. 95 (1965) 1527 [in German].
4) H. W. Knott, M. H. Mueller and L. Heaton: Acta Crystallogr. 23 (1967) 549.
5) H. Q. Ye and S. Amelinckx: J. Solid State Chem. 61 (1986) 8.

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Effects of Ge Doping on Micromorphology of MnSi in MnSi~1.7 and on Their Thermoelectric Transport Properties

Effects of Ge Doping on Micromorphology of MnSi in MnSi_~1.7 and on Their Thermoelectric Transport Properties