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J-GLOBAL ID:200902287504020842   Reference number:06A0384426

High-Performance Fully Depleted Silicon Nanowire (Diameter≦5nm) Gate-All-Around CMOS Devices

高性能完全空乏Siナノ細線(口径≦5nm)ゲート-オール-アラウンドCMOSデバイス
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Volume: 27  Issue:Page: 383-386  Publication year: May. 2006 
JST Material Number: B0344B  ISSN: 0741-3106  CODEN: EDLEDZ  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors  ,  Materials of solid-state devices 
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