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J-GLOBAL ID：200902288068331965   Reference number：06A0195751

Symmetrical threshold voltage in complementary metal-oxide-semiconductor field-effect transistors with HfAlOx(N) achieved by adjusting Hf/Al compositional ratio

Hf/Al組成比を調整して得られたHfAlO_x(N)を有する相補型金属-酸化物-半導体電界効果トランジスタにおける対称なしきい値電圧

Author (11)： KADOSHIMA Masaru (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  OGAWA Arito (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  OTA Hiroyuki (MIRAI, Advanced Semiconductor Res. Center (ASRC), National Inst. of Advanced Industrial Sci. and Technol. (AIST) ...) ,  IWAMOTO Kunihiko (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  TAKAHASHI Masashi (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  MISE Nobuyuki (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  MIGITA Shinji (MIRAI, Advanced Semiconductor Res. Center (ASRC), National Inst. of Advanced Industrial Sci. and Technol. (AIST) ...) ,  IKEDA Minoru (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  SATAKE Hideki (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  NABATAME Toshihide (MIRAI, Assoc. of Super-Advanced Electronics Technologies (ASET), Tsukuba, Ibaraki 305-8569, JPN) ,  TORIUMI Akira (MIRAI, Advanced Semiconductor Res. Center (ASRC), National Inst. of Advanced Industrial Sci. and Technol. (AIST) ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 99  Issue： 5  Page： 054506-054506-6  Publication year： Mar. 01, 2006 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,...

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JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Semiconductor integrated circuit  (NC03162T)

Terms in the title (7)： HF ,  Al ,  組成比 ,  酸化物 ,  電界効果トランジスタ ,  対称 ,  しきい値電圧