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J-GLOBAL ID：200902289236075330   Reference number：04A0867304

Effects of O2 Gas Partial Pressure on Mechanical Properties of SiC Films Deposited by Radio Frequency Magnetron Sputtering

高周波マグネトロンスパッタ法によるSiC膜の機械的特性に及ぼす酸素分圧の影響
Author (3)：
FUJIYAMA HIROKAZU

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(福岡工大 工)

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, 
SUMOMOGI TSUNETAKA

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(広島国際学院大)

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, 
AMAMOTO YOSHIFUMI

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(福岡工大 大学院工学研究科)

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Material：
福岡工業大学エレクトロニクス研究所所報  (Reports of the Electronics Research Laboratory, Fukuoka Institute of Technology)

About 福岡工業大学エレクトロニクス研究所所報


Volume： 21  Page： 15-22  Publication year： Oct. 31, 2004 
JST Material Number： Y0948A  ISSN： 0911-050X  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
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*silicon carbide

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,...
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Thesaurus term/Semi thesaurus term
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SUS304

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JST classification (2)：
JST classification
Category name(code) classified by JST.
Thin films of other inorganic compounds 
(BK14060A)

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,  Ceramic coating to metallic materials 
(YC02050V)

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Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
高周波マグネトロンスパッタ法

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, 
SiC

About SiC

, 
機械的特性

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, 
酸素分圧

About 酸素分圧


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