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J-GLOBAL ID:200902290183086553   Reference number:09A1223436

Investigation of relation between crystalline orientation of FeCo Spin Polarization Enhancement Layer and magnetic properties of in p-MTJ with RE-TM alloy films

RE-TM膜を用いた垂直MTJ中のFeCoスピン偏極層の結晶配向と磁化特性の評価
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Material:
Volume: 109  Issue: 222(MR2009 21-28)  Page: 41-45  Publication year: Oct. 01, 2009 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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JST classification (2):
JST classification
Category name(code) classified by JST.
Memory units  ,  Magnetic properties of metals 
Reference (9):
  • 1) YOSHIKAWA M. Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with perpendicular magnetic L1_0-FePt electrodes. IEEE Trans. Magn.. (2008) vol.44, no.11, p.2573.
  • 2) DUCRUET C. Magnetoresistance in Co/Pt based magnetic tunnel junctions with out-of-plane magnetization. J. Appl. Phys.. (2008) vol.103, p.07A918.
  • 3) PARK J.-H. Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy. J. Appl. Phys.. (2008) vol.103, p.07A917.
  • 4) NAKAYAMA M. Spin transfer switching in TbCoFe/CoFeB/MgO/CoFeB/TbCoFe magnetic tunnel junctions with perpendicular anisotropy. J. Appl. Phys.. (2008) vol.103, p.07A710.
  • 5) OHMORI H. Fabrication of MgO barrier for a magnetic tunnel junction in as-deposited state using amorphous RE-TM alloy. J. Magn. Magn. Mater.. (2008) vol.320, p.2963.
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